LSK389-D-TO-716L [Linear Systems]

ULTRA LOW NOISE MONOLITHIC DUAL N-CHANNEL JFET AMPLIFIER;


型号：	LSK389-D-TO-716L
厂家：	Linear Systems
描述：	ULTRA LOW NOISE MONOLITHIC DUAL N-CHANNEL JFET AMPLIFIER 放大器
文件：	总2页 (文件大小：238K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

LSK389

ULTRA LOW NOISE

MONOLITHIC DUAL

N-CHANNEL JFET AMPLIFIER

FEATURES

ULTRA LOW NOISE

TIGHT MATCHING

HIGH BREAKDOWN VOLTAGE

HIGH GAIN

e_n= 0.9nV/√Hz (typ)

IV_GS1-2I= 20mV max

BV_GSS= 40V max

G_fs= 20mS (typ)

25pF typ

LOW CAPACITANCE

IMPROVED SECOND SOURCE REPLACEMENT FOR 2SK389

ABSOLUTE MAXIMUM RATINGS¹

@ 25 °C (unless otherwise stated)

Maximum Temperatures

Storage Temperature

-65 to +150°C

-55 to +135°C

Junction Operating Temperature

Maximum Power Dissipation

Continuous Power Dissipation @ +25°C

Maximum Currents

SOIC-A

TO-71

400mW

Top View

Gate Forward Current

Maximum Voltages

I_G(F)= 10mA

* For equivalent single version, see LSK170 family

Gate to Source

V_GSS= 40V

V_GDS= 40V

Gate to Drain

MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated)

SYMBOL

CHARACTERISTIC

MIN TYP MAX UNITS CONDITIONS

Differential Gate to Source Cutoff

Voltage

GS1  VGS2

_mV

---

V_DS= 10V, I_D= 1mA

V_DS= 10V, V_GS= 0V

DSS1

Gate to Source Saturation Current Ratio 0.9

DSS2

ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise stated)

SYMBOL

BV_GSS

CHARACTERISTIC

MIN TYP MAX UNITS CONDITIONS

Gate to Source Breakdown Voltage

Gate to Source Pinch-off Voltage

-40

-0.15

2.6

V_DS= 0, I_D= -100µA

V_DS= 10V, I_D= 0.1µA

V_GS(OFF)

-2

6.5

LSK389A

LSK389B

LSK389C

LSK389D

Drain to Source Saturation

Current

I_DSS

V_DS= 10V, V_GS= 0

V_GS= -30V, V_DS= 0

I_GSS

Gate to Source Leakage Current

Gate to Gate Isolation Current

-200

±1.0

µA

I_G1G2

V_G1-_G2= ±45V, I_D= I_S= 0A

Note: All MIN/TYP/MAX limits are absolute numbers. Negative signs indicate electrical polarity only.

Linear Integrated Systems

• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261

Doc 201122 5/02/2014 Rev#A7 ECN# LSK389

ELECTRICAL CHARACTERISTICS CONT. @ 25°C (unless otherwise stated)

SYMBOL

CHARACTERISTIC

MIN TYP MAX UNITS CONDITIONS

G_fs

Full Conduction Transconductance

0.9

2.5

V_DS= 10V, V_GS= 0, f = 1kHz

V_DS= 10V, I_D= 2mA, f = 1kHz,

NBW = 1Hz

V_DS= 10V, I_D= 2mA, f = 10Hz,

NBW = 1Hz

e_n

Noise Voltage

1.9 Nv/√Hz

Nv/√Hz

C_ISS

Common Source Input Capacitance

V_DS= 10V, V_GS= 0, f = 1MHz,

V_DG= 10V, I_D= 0, f = 1MHz,

C_RSS

Common Source Reverse Transfer Cap.

5.5

ORDERING INFORMATION

LSK389 -

SOIC-8

Package

I_DSSRange

A 2.6 - 6.5 mA

B 6 - 12 mA

TO-71 6L

TO-71

C 10 - 20 mA

D 17 - 30 mA

SOIC-A 8L

SOIC-8

PACKAGE DIMENSIONS

TO-71

SOIC-A

0.210

0.170

Note: All Dimensions in inches

NOTES:

1. Absolute maximum ratings are limiting values above which serviceability may be impaired.

Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use;

nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or

otherwise under any patent or patent rights of Linear Integrated Systems.

Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing high-quality

discrete components. Expertise brought to LIS is based on processes and products developed at Amelco, Union Carbide, Intersil

and Micro Power Systems by company President John H. Hall. Hall, a protégé of Silicon Valley legend Dr. Jean Hoerni, was the

director of IC Development at Union Carbide, Co-Founder and Vice President of R&D at Intersil, and Founder/President of Micro

Power Systems.

Linear Integrated Systems

• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261

Doc 201122 5/02/2014 Rev#A7 ECN# LSK389

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